IXYH50N120C3D1 igbt equivalent, igbt.
z z z
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300 260 1.13/10 6
Optimized for Low Switching Losses Square RBSOA Positive Thermal Coefficient of Vce(sat) Anti-Parallel Ultra Fast Diode Avalanche Rated.
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V .
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